#MG50Q6ES40 Toshiba MG50Q6ES40 New 6IGBT: 50A/1200V, MG50Q6ES40 pictures, MG50Q6ES40 price, #MG50Q6ES40 supplier
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Email: [email protected]
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Email: [email protected]
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MG50Q6ES40 Description
Target_Applications
MG50Q6ES40 could be used in High Power Switching / Motor Control Applications
Features
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:50A
Collector current Icp:100A
Collector power dissipation Pc:280W
Collector-Emitter voltage VCES:1200V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2/3 *1 N·m
6IGBT: 50A/1200V